Panasonic - 2SC5609G

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Contents

Transistors This product complies with the RoHS Directive EU 2002 95 EC Panasonic 2SC5609G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021G Features High forward current transfer ratio h FE Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Collector base voltage Emitter open Vcbo 60 V Collector emitter voltage Base open Vceo 50 V Emitter base voltage Collector open Vebo 7 V Collector current Ic 100 mA Peak collector current Icp 200 mA Collector power dissipation Pc 100 mW Junction temperature T i 125 C Storage temperature Ttg 55 to 125 C Package Code SSSMini3 F2 Pin Name 1 Base 2 Emitter ...