Panasonic - 2SA2009G

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Contents

Transistors This product complies with the RoHS Directive EU 2002 95 EC Panasonic 2SA2009G Silicon PNP epitaxial planar type For low frequency high breakdown voltage amplification Features High collector emitter voltage Base open Vceo Low noise voltage NY S Mini type package allowing downsizing and thinning of the equipment and automatic insertion through the tape packing Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Collector base voltage Emitter open Ycbo 120 V Collector emitter voltage Base open Yceo 120 V Emitter base voltage Collector open Yebo 5 V Collector current Ic 20 mA Peak collector current Icp 50 mA Collector power dissipation Pc 150 ...