Renesas - 3SK318

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Contents

3SK318 Silicon N Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0819 0200 Previous ADE 208 600 Rev 2 00 Aug 10 2005 Features Low noise characteristics NF 1 4 dB typ at f 900 MHz Excellent cross modulation characteristics Capable low voltage operation B 5V Outline RENESAS Package code PTSP0004ZA A Package name CMPAK 4 1 Source 2 Gatel 3 Gate2 4 Drain Note Marking is YB Rev 2 00 Aug 10 2005 page 1 of 7 i ersies 3SK318 Absolute Maximum Ratings Ta 25 C Item Symbol Ratings Unit Drain to source voltage Vds 6 V Gatel to source voltage Vgis 6 V Gate2 to source voltage Vg2S 6 V Drain current Id 20 mA Channel power dissipation Pch 100 mW ...