Cypress - CY14B104N

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Contents

PERFORM CY14B104L CY14B104N 4 Mbit 512K x 8 256K x 16 nvSRAM Features 20 ns 25 ns and 45 ns Access Times Internally organized as 512K x 8 CY14B104L or 256K x 16 CY14B104N Hands off Automatic STORE on power down with only a small Capacitor STORE to QuantumTrap nonvolatile elements initiated by software device pin or AutoStore on power down RECALL to SRAM initiated by software or power up Infinite Read Write and Recall Cycles 200 000 STORE cycles to QuantumTrap 20 year data retention Single 3V 20 to 10 operation Functional Description The Cypress CY14B104L CY14B104N is a fast static RAM with a nonvolatile element in each memory cell The memory is organized as 512K bytes of 8 bits each or 256K ...