Panasonic - MA3SE020G

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Contents

This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA3SE020G Silicon epitaxial planar type For cellular phone Features High frequency wave detection is possible Low forward voltage V F Small terminal capacitance C t Absolute Maximum Ratings T a 25 C Parameter Symbol Rating Unit Reverse voltage v R 20 V Maximum peak reverse voltage Vrm 20 V Forward current Single If 35 mA Series 25 Peak forward Single Ifm 100 mA current Series 70 Junction temperature T j 125 C Storage temperature Tstg 55 to 125 C Package Code SSMini3 F3 Pin Name 1 Anode 1 2 Cathode 2 3 Cathode 1 Anode 2 M ...