Panasonic - MA3S795EG

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Contents

This product complies with the RoHS Directive EU 2002 95 EC Schottky Barrier Diodes SBD Panasonic MA3S795EG Silicon epitaxial planar type For switching For wave detection Features High density mounting is possible Forward voltage Vp optimum for low voltage rectification Vp lt 0 3 V Optimum for high frequency rectification because of its short reverse recovery time t Absolute Maximum Ratings Ta 25 C Parameter Symbol Rating Unit Reverse voltage Vr 30 V Maximum peak reverse voltage Vrm 30 V Forward current Single Ip 30 mA Double 20 Peak forward current Single IpM 150 mA Double 110 Junction temperature Tj 125 C Storage time Tstg 55 to 125 C Packag ...